IMEC’s sub-45nm industrial affiliation programs will be carried out in a centralized process research platform to optimize the return on investment related to 300mm processing.

Leuven, Belgium, May 16, 2003 --- IMEC launches two industrial affiliation programs (IIAPs) targeting the sub-45nm technology generations. The first program aims at providing solutions for improved device performance by implementing strained silicon (Si) in the transistor channel for scaled planar MOS devices. The second program will exploit the high-mobility features of germanium (Ge) to fabricate high-performance CMOS transistors. The programs are inter-linked with IMEC’s present advanced CMOS research programs, which aim at developing the enabling process and device technologies for future technology generations.

Within the first program, “Implementation of high-mobility layers and advanced source/drain engineering solutions in scaled planar devices”, the introduction of strained Si will be investigated to improve carrier mobility. The research covers strained Si formation on top of SRB (Strain Relaxed Buffer) layers, silicide formation, shallow junctions and extensions, compatibility issues, advanced strain characterization and device demonstration.

Within this program, partners can benefit from major breakthroughs that IMEC has already achieved in the area of strained Si on SiGe transistors, ultra-shallow junctions and silicides. As such IMEC has developed an innovative production technique for thin SRBs with a total thickness of less than about 200nm and with superior properties compared to the industry standard. This SRB technique moreover can also be applied in a selective way on pre-formed isolation structures such as STI (Shallow-Trench Isolation). Besides that IMEC has shown world-record mobility figures for holes in hetero-pMOS with strained SiGe.

The second program will explore a Ge-based technology to fabricate high-performance CMOS transistors in a process compatible with silicon baseline CMOS. Ge has recently regained significant interest within the semiconductor industry due to its attractive properties such as high mobility and compatibility with high-k materials. These features make Ge CMOS devices ideally suited for high-performance, low power circuits with even improved performance compared to advanced strained Si layers.

The Ge CMOS devices program targets the feasibility demonstration of fabricating Ge devices compatible with a state-of-the-art Si production line. These Ge devices will include high-k materials and metal gates to obtain aggressively scaled EOT (Equivalent Oxide Thickness) targets. Ultimately, the program aims at the fabrication of high-performant CMOS transistor structures in Ge that can be used for future technology generations.

These innovative programs will be closely inter-linked with IMEC’s current advanced material, process steps and models research programs targeting the sub-45nm technology node, including:

·       implementation of high-k dielectrics and metal gates in scaled planar devices;

gate FETs);

·       cleaning and contamination control.

The programs are initially using 200mm equipment and will gradually transition to 300mm equipment in IMEC’s new facility now under construction. The move to 300mm will guarantee that the advanced research is at least two generations ahead of industrial requirements. In addition, this centralized research process platform will serve various industry alliances. In this way, IMEC and its research partners can optimize the return on investments associated with the high increased costs of 300mm technology.

Potential partners are leading IC and wafer manufacturers. These companies benefit from IMEC’s long tradition and track record in process module and advanced device research emphasizing on module implementation issues and from IMEC’s unique business model which is based on a sharing of cost, risk, talent and intellectual property.

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Notes to editors

The IMEC Industrial Affiliation Programs (IIAP)

IMEC's industrial affiliation program (IIAP) formula is recognized worldwide as one of the most successful partnership schemes in research and development. The collaborations are based on shared costs and risks and are built on sound intellectual property rules.

About IMEC

IMEC (Inter-university MicroElectronics Center) was founded in 1984 and today is Europe’s largest independent research center in the field of microelectronics, nanotechnology, enabling design methods and technologies for ICT systems. IMEC's activities concentrate on the design technology for integrated information and communication systems; silicon process steps and modules, silicon processes; nanotechnology, microsystems, components and packaging; solar cells; and advanced training in microelectronics. IMEC is headquartered in Leuven, Belgium, and has a staff of more than 1250 people including over 380 industrial residents and guest researchers. Its revenue of more than 138Meuro is derived from agreements and contracts with the Flemish government and companies, equipment and material suppliers and semiconductor and system-oriented companies worldwide, the EC, MEDEA+ and ESA. News from IMEC is located at www.imec.be.

For more information:

Katrien Marent

Corporate Communication Manager

IMEC, Kapeldreef 75

B- 3001 Leuven, Belgium

Tel +32 16 28 18 80 Fax +32 16 28 16 37

Email: Katrien.Marent@imec.be