CMORE - heterogeneous integration

Power electronics

• GaN epitaxial layer growth
• GaN devices
• GaN device integration

Invent - As a first step to produce GaN devices economically, imec is looking into using large-diameter GaN-on-Si epiwafers.

Achieve - Imec uses metalorganic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE) for the epitaxial growth of III-nitrides based heterostructures on large diameter Si substrates. In 2008, IMEC has demonstrated the growth of high-quality and uniform AlGaN/GaN heterostructures on 200mm silicon wafers.