Scaling-driven nanoelectronics
New materials
Imec studies a combination of Ge pMOS with III-V nMOS. Also, further CMOS scaling will not only need new materials, but also new device concepts. The use of non-Si channel materials gives an excellent opportunity to introduce more aggressive scalable device concepts, such as quantum well-high electron mobility transistors (QW-HEMT).
For pMOS a strained Ge channel and for nMOS a strained InGaAs channel (with high In content) promises to be the best way for further CMOS scaling. For future generations, InSb could be a very good candidate to replace the Ge and InGaAs channels if combined with strain engineering to further increase the mobility of the InSb channels.