Scaling-driven nanoelectronics

Transistors (front-end)

• Transistor gates (shallow junctions)
• New materials (high-k, metal gates, strain)
• New architectures (multi-gate field effect transistors)

Invent - Imec develops techniques to make the junctions between source/drain and the channel as shallow as possible.

Achieve - the use of laser-only annealing for gate-stack engineering resulted in a significant decrease of the minimum sustainable gate length and an improved short-channel effect control.